Free Electronics and Devices MCQs with Answers

758 Electronics and Devices MCQs from Electrical Engineering, each with the correct answer and a written explanation of why it is correct. Free and unlimited, with no account needed.

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758 questions · page 28 of 38

  • A. more than 1
  • B. less than 1
  • C. 1
  • D. none of the above

Explanation: The symbol is evidently alpha, the common-base current gain, defined as collector current divided by emitter current.

Correct answer: less than 1
  • A. is forward biased
  • B. is reverse biased
  • C. carrier more than rated current
  • D. none of the above

Explanation: A zener diode can operate safely in reverse bias only up to its rated current and power.

Correct answer: carrier more than rated current
  • A. ß = 1 / (1 - a )
  • B. ß = (1 - a ) / a
  • C. ß = a / (1 - a )
  • D. ß = a / (1 + a )

Explanation: Since α = I_C/I_E and I_E = I_C + I_B, rearranging gives β = I_C/I_B = α/(1 − α). Therefore option c is the required relation.

Correct answer: ß = a / (1 - a )
  • A. the same as
  • B. less than
  • C. more than
  • D. none of the above

Explanation: A zener diode is heavily doped compared with an ordinary crystal diode, producing a thin depletion region and a controlled breakdown…

Correct answer: more than
  • A. 180o
  • B. 90o
  • C. 270o
  • D. 0o

Explanation: In a common-base transistor, the output collector voltage varies in phase with the input emitter voltage, so there is no phase reversal.

Correct answer: 0o
  • A. forward characteristic
  • B. doping level
  • C. reverse characteristic
  • D. PIC rating

Explanation: When a diode is used for rectification, it must withstand the maximum reverse voltage applied during the nonconducting half-cycle.

Correct answer: PIC rating
  • A. more than
  • B. less than
  • C. the same as
  • D. none of the above

Explanation: The CE leakage current is approximately I_CEO = (1 + β)I_CBO, so transistor current gain makes it much larger than the CB leakage current.

Correct answer: more than
  • A. reverse
  • B. forward
  • C. either reverse or forward
  • D. none of the above

Explanation: A zener diode is normally operated in its reverse-breakdown region, where it maintains an approximately constant voltage.

Correct answer: reverse
  • A. one pn junction
  • B. two pn junctions
  • C. three pn junctions
  • D. none of the above

Explanation: A zener diode is a specially manufactured two-layer semiconductor device containing one p-n junction.

Correct answer: one pn junction
  • A. germanium
  • B. silicon
  • C. carbon
  • D. none of the above

Explanation: BC147 is a silicon NPN transistor; the BC designation is commonly used for low-power silicon transistors.

Correct answer: silicon
  • A. decreases
  • B. increases
  • C. remains the same
  • D. none of the above

Explanation: As temperature rises, leakage current increases and the base-emitter voltage needed for conduction falls, so the effective base-emitter…

Correct answer: decreases
  • A. common emitter
  • B. common base
  • C. common collector
  • D. none of the above

Explanation: The common-emitter arrangement provides useful voltage and current gain, giving it the widest general use in transistor amplifiers.

Correct answer: common emitter
  • A. reverse
  • B. forward
  • C. forward or reverse
  • D. none of the above

Explanation: Rectification uses the diode's forward characteristic, in which current flows readily in one direction while reverse current is very…

Correct answer: forward
  • A. high
  • B. zero
  • C. low
  • D. very low

Explanation: A transistor's output impedance is generally treated as high, especially in the common-emitter amplifier model, because a change in…

Correct answer: high
  • A. lightly
  • B. heavily
  • C. moderately
  • D. none of the above

Explanation: The emitter is heavily doped so it can inject a large number of majority carriers into the base.

Correct answer: heavily
  • A. an amplifier
  • B. a voltage regulator
  • C. a rectifier
  • D. a multivibrator

Explanation: A Zener diode is operated in its controlled reverse-breakdown region, where it maintains an approximately constant voltage across a load.

Correct answer: a voltage regulator
  • A. applied voltage
  • B. breakdown voltage
  • C. forward voltage
  • D. barrier potential

Explanation: The knee voltage is the approximate forward voltage at which diode current begins to rise sharply, so it is associated with the barrier…

Correct answer: barrier potential
  • A. forward
  • B. inverse
  • C. poor
  • D. reverse

Explanation: A large diode current normally occurs under forward bias, when the junction barrier is reduced and majority carriers cross the junction…

Correct answer: forward
  • A. remains the same
  • B. decreases
  • C. increases
  • D. becomes zero

Explanation: Reverse leakage current increases with temperature because thermally generated minority carriers become more numerous.

Correct answer: increases
  • A. remains the same
  • B. is increased
  • C. is decreased
  • D. none of the above

Explanation: Heavier doping narrows the depletion region and causes breakdown at a lower reverse voltage, especially in a Zener-type junction.

Correct answer: is decreased