Free Electronics and Devices MCQs with Answers

758 Electronics and Devices MCQs from Electrical Engineering, each with the correct answer and a written explanation of why it is correct. Free and unlimited, with no account needed.

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758 questions · page 27 of 38

  • A. the edge of the depletion region on the p-side
  • B. the edge of the depletion region on the n-side
  • C. the p-n junction
  • D. the center of the depletion region on the n-side

Explanation: Under reverse bias, the electric field rises from zero at the depletion-region edges to its maximum at the p-n junction, where the…

Correct answer: the p-n junction
  • A. affects the difference mode gain Ad
  • B. affects the common mode gain Ac
  • C. affects both Ad and Ac
  • D. does not effect either Ad and Ac

Explanation: Changing the emitter or tail resistance mainly changes the common-mode gain because common-mode currents flow through this resistance.

Correct answer: affects the common mode gain Ac
  • A. the mobility decreases
  • B. the transconductance increases
  • C. the drain current increases
  • D. none of the above

Explanation: As FET temperature rises, carrier mobility decreases, reducing drain current for a given gate bias.

Correct answer: the mobility decreases
  • A. forward
  • B. reverse
  • C. both forward and reverse
  • D. none of the above

Explanation: A zener diode is normally operated in reverse bias, where its controlled breakdown characteristic provides voltage regulation.

Correct answer: reverse
  • A. undefined
  • B. sharp
  • C. zero
  • D. none of the above

Explanation: A zener diode is manufactured to enter breakdown at a specified, sharply defined voltage.

Correct answer: sharp
  • A. properly reverse bias the zener
  • B. protect the zener
  • C. properly forward bias the zener
  • D. none of the above

Explanation: The series resistor limits the current through the zener when it operates in breakdown, preventing excessive dissipation and damage.

Correct answer: protect the zener
  • A. junction capacitance
  • B. charge storage capacitance
  • C. depletion capacitance
  • D. channel length modulation

Explanation: Junction, depletion, and charge-storage capacitances are associated with p-n junction behavior.

Correct answer: channel length modulation
  • A. constant voltage
  • B. constant current
  • C. constant resistance
  • D. none of the above

Explanation: In breakdown, a zener diode holds its voltage nearly constant over a range of current, so it is modeled approximately as a…

Correct answer: constant voltage
  • A. a non-linear
  • B. a linear
  • C. an amplifying
  • D. none of the above

Explanation: A zener diode has a nonlinear voltage-current characteristic, especially around its breakdown region.

Correct answer: a non-linear
  • A. ICEO
  • B. ICBO
  • C. IC
  • D. (1 - a ) IB

Explanation: Starting with I_C = βI_B + I_CEO and β = α/(1 − α), the relation becomes I_C = [α/(1 − α)]I_B + I_CEO.

Correct answer: ICEO
  • A. ICBO
  • B. IC
  • C. ICEO
  • D. aIE

Explanation: For a transistor in common-emitter form, collector current is I_C = βI_B + I_CEO, where I_CEO is the collector-emitter leakage current…

Correct answer: ICEO
  • A. common emitter
  • B. common collector
  • C. common base
  • D. none of the above

Explanation: The common-base configuration has very high output resistance because its collector output characteristic is nearly flat.

Correct answer: common base
  • A. paper capacitor
  • B. air capacitor
  • C. mica capacitor
  • D. electrolytic capacitor

Explanation: Paper capacitors are commonly used as high-voltage filter capacitors because they withstand high working voltages and provide suitable…

Correct answer: paper capacitor
  • A. IB
  • B. ICEO
  • C. ICBO
  • D. ßIB

Explanation: The common-base transistor relation is I_C = αI_E + I_CBO, where I_CBO is the collector-to-base leakage current with the emitter open.

Correct answer: ICBO
  • A. the diode conducts poorly
  • B. the diode is destroyed
  • C. the diode behaves like a zener diode
  • D. none of the above

Explanation: Exceeding a diode's peak inverse voltage causes reverse-breakdown current, which can overheat and permanently damage the junction.

Correct answer: the diode is destroyed
  • A. acceptor ions
  • B. donor ions
  • C. free electrons
  • D. holes

Explanation: A PNP transistor has holes as its majority charge carriers, supplied mainly by the p-type emitter.

Correct answer: holes
  • A. heavily
  • B. moderately
  • C. lightly
  • D. none of the above

Explanation: The collector is moderately doped so it can withstand a relatively high reverse-bias voltage while still collecting carriers efficiently.

Correct answer: moderately
  • A. paper capacitor
  • B. mica capacitor
  • C. electrolytic capacitor
  • D. air capacitor

Explanation: A 10 V power supply commonly uses an electrolytic capacitor because it provides large capacitance for smoothing rectified voltage and is…

Correct answer: electrolytic capacitor
  • A. free electrons
  • B. holes
  • C. donor ions
  • D. acceptor ions

Explanation: In an NPN transistor, electrons are the majority carriers because the emitter and collector are n-type, while holes are the minority…

Correct answer: holes
  • A. high
  • B. low
  • C. very high
  • D. almost zero

Explanation: A transistor's input impedance is generally low to moderate, especially compared with a field-effect transistor, because its input…

Correct answer: low