N -type materials are obtained by dopping intrinsic germanium with:
Correct answer: B. Pentavalent impurity atoms
- A. Trivalent impurity atoms
- B. Pentavalent impurity atoms
- C. Tetravalent impurity atoms
- D. None of these
Explanation
N-type materials are obtained by doping intrinsic (pure) germanium with a pentavalent impurity. Commonly used pentavalent dopants for germanium include elements like phosphorus (P), arsenic (As), or antimony (Sb). These elements have five valence electrons, one more than germanium's four valence electrons. When these pentavalent atoms replace some of the germanium atoms in the crystal lattice, they introduce extra electrons into the structure, creating an excess of negative (n-type) charge carriers, enhancing the material's conductivity.
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A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.
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