In P-type semiconductor, the doping of Silicon is taken place with:
Correct answer: B. Trivalent
- A. Bivalent
- B. Trivalent
- C. Tetravalent
- D. Pentavalent
Explanation
P-type semiconductors are created by doping silicon with trivalent elements, which have three valence electrons. This creates holes in the crystal lattice that act as positive charge carriers. Bivalent and tetravelent elements do not introduce the necessary charge carriers for P-type doping. Pentavalent elements are used in N-type doping, providing extra electrons rather than holes.
Report an error
The more specific you are, the faster it gets fixed. A source beats an opinion.
Prefer email? [email protected]
About Electronics
A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.
Practise Electronics
660 free Electronics MCQs from Physics, each with the correct answer and an explanation. Unlimited attempts, no account needed.
Discussion
Stuck on an option, or know a faster way to get there? Ask or explain it here.
No comments yet. Be the first to explain this one.
Exams that ask Physics questions like this
Physics is on 16 papers prepared for on TestUstad, and all of them draw the same bank, so this question is worth knowing for every one of them.
More Electronics questions
In extrinsic semiconductor, the doping level should be in the ratio:
Which one of the following is an intrinsic semiconductor?
Germanium at 0K is:
When p-type and N-type semiconductor are combined then we have a:
The depletion region in PN-Junction carries:
The potential difference across the silicon PN-junction is: