The potential difference across the silicon PN-junction is:
Correct answer: C. 0.7 V
- A. 0.3 V
- B. 0.5 V
- C. 0.7 V
- D. 0.9 V
Explanation
The correct answer is C. The typical forward voltage drop for a silicon PN-junction is around 0.7 V. This value is due to the material properties of silicon and is a standard characteristic of silicon diodes. Option A (0.3 V) is usually associated with germanium diodes, not silicon. Option B (0.5 V) is lower than the typical forward voltage for silicon but falls within the broader range. Option D (0.9 V) exceeds the usual range for silicon diodes, indicating a value that is too high for typical applications.
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A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.
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