Moderate

In extrinsic semiconductor, the doping level should be in the ratio:

Correct answer: B. 1:106

  • A. 1:10-6
  • B. 1:106
  • C. 1:10-8
  • D. 1:108

Explanation

In extrinsic semiconductors, achieving the right balance of dopant concentration is key to optimizing electrical properties. The correct ratio is approximately 1 dopant atom per 106 host atoms (Option B), which introduces enough charge carriers to significantly enhance conductivity while maintaining the structural integrity of the semiconductor. Options A (1:10-6) and C (1:10-8) suggest ratios that are too high, leading to excessive changes in material properties and potential lattice disruptions. Option D (1:108) proposes a concentration too low to effectively alter conductivity, resulting in minimal impact on the semiconductor's performance.

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A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.

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