Free Electronics and Devices MCQs with Answers
758 Electronics and Devices MCQs from Electrical Engineering, each with the correct answer and a written explanation of why it is correct. Free and unlimited, with no account needed.
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758 questions · page 25 of 38
- A. 2.3mA
- B. 3.2mA
- C. 4.6 mA
- D. 5.2mA
Explanation: Using IC = α(IB + IC) + ICO gives IC = (αIB + ICO)/(1 − α) = (0.98 × 100 μA + 6 μA)/0.02 = 5.2 mA.
Correct answer: 5.2mA- A. 2
- B. 1
- C. 1/2
- D. 0
Explanation: CMRR = Ad/Ac, and 80 dB means a gain ratio of 10^(80/20) = 10,000. Therefore, Ac = 20,000/10,000 = 2.
Correct answer: 2- A. current controlled capacitor
- B. voltage controlled capacitor
- C. current controlled inductor
- D. voltage controlled inductors
Explanation: The MOSFET gate controls the channel through an electric field, so its effective capacitance varies with applied voltage.
Correct answer: voltage controlled capacitor- A. Common base
- B. Common emitter
- C. Common collector
- D. All have the same gain
Explanation: The common-emitter configuration provides both substantial voltage gain and current gain, so its power gain is generally the highest of…
Correct answer: Common emitter- A. cut off point
- B. saturation point
- C. operating point
- D. quasi saturation point
Explanation: The horizontal intercept occurs when collector current is zero and the full supply voltage appears across the transistor, which is the…
Correct answer: cut off point- A. 99%
- B. 85%
- C. 50%
- D. 25%
Explanation: For a class-A common-base amplifier with a resistive collector load, the maximum theoretical efficiency is 25%.
Correct answer: 25%- A. Only the temperature
- B. only the β of the transistor
- C. Both Temperature & β
- D. None of the above
Explanation: The emitter resistor creates negative feedback: it counteracts changes in collector current caused by temperature or transistor beta…
Correct answer: Both Temperature & β- A. Vdc = Vm/π, PIV=2Vm
- B. Vdc = 2Vm/π, PIV=2vm
- C. Vdc = 2Vm/π, PIV=Vm
- D. Vdc = Vm/π, PIV=Vm
Explanation: For a center-tapped full-wave rectifier, the average load voltage is 2Vm/π, and the nonconducting diode must withstand twice the peak…
Correct answer: Vdc = 2Vm/π, PIV=2vm- A. Current controlled Current source
- B. Current controlled voltage source
- C. Voltage controlled voltage source
- D. voltage controlled current source
Explanation: The JFET gate voltage controls the channel current, while the drain-source path acts as the output port.
Correct answer: voltage controlled current source- A. Internal Capacitance of the device
- B. Coupling capacitor at the input
- C. Skin effect
- D. Coupling capacitor at the output
Explanation: At high frequencies, the transistor's internal junction and stray capacitances provide low-reactance paths that reduce gain.
Correct answer: Internal Capacitance of the device- A. Transistor capacitances
- B. High current effects in the base
- C. Parasitic inductive elements
- D. The early effect
Explanation: Internal transistor capacitances, especially base-emitter and base-collector capacitances, increasingly shunt the signal as frequency…
Correct answer: Transistor capacitances- A. Reduces gain
- B. Increase frequency &phase distortion
- C. Reduces bandwidth
- D. Increases noise
Explanation: Negative feedback sacrifices some amplifier gain but generally increases bandwidth and reduces distortion and noise.
Correct answer: Reduces gain- A. get maximum efficiency
- B. remove even harmonics
- C. overcome a crossover distortion
- D. reducing collector dissipation
Explanation: Class B amplifiers suffer crossover distortion near zero current, where neither transistor conducts properly.
Correct answer: overcome a crossover distortion- A. 0.25
- B. 0.5
- C. 0.75
- D. 1
Explanation: Using the Shockley relation, the factor is 1 - VGS/Vp = 1 - (-2/-4) = 0.5. Since gm0 = 2IDSS/|Vp| = 1 mA/V, gm = 1 × 0.5 = 0.5 mA/V.
Correct answer: 0.5495. The effective channel length of a MOSFET in a saturation decreases with increase in___________?
- A. Gate voltage
- B. Drain voltage
- C. Source voltage
- D. Body voltage
Explanation: Increasing drain voltage enlarges the drain depletion region, causing channel-length modulation and shortening the effective channel…
Correct answer: Drain voltage- A. fast turn-on
- B. fast turn-off
- C. large collector-base reverse bias
- D. large emitter-base forward bias
Explanation: The Early effect occurs when increased collector-base reverse bias widens the base depletion region and effectively narrows the base…
Correct answer: large collector-base reverse bias- A. the amplitude of output is proportional to rate of change of input
- B. the amplitude of output is proportional to input
- C. output occurs when input is finite and constant
- D. polarity of input and output is the same
Explanation: An op-amp differentiator produces an output proportional to the time derivative of the input, so faster input changes produce a larger…
Correct answer: the amplitude of output is proportional to rate of change of input- A. all resistors
- B. all transistors
- C. all inductors
- D. all capacitors
Explanation: For the usual midband AC equivalent circuit, capacitors have negligible reactance and are replaced by short circuits.
Correct answer: all capacitors- A. negligible input resistance and high output resistance
- B. high input resistance and low output resistance
- C. medium input resistance and high output resistance
- D. low input resistance as well as output resistance
Explanation: A common-emitter transistor stage has moderate input resistance and relatively high output resistance, along with useful voltage and…
Correct answer: medium input resistance and high output resistance- A. doping of base
- B. size of emitter
- C. rating of transistor
- D. temperature
Explanation: Transistor leakage current is strongly temperature-dependent and increases significantly as temperature rises.
Correct answer: temperature