The potential difference across the silicon PN junction is:
Correct answer: B. 0.7 V
- A. 0.3 V
- B. 0.7 V
- C. 0.5 V
- D. 5.0 V
Explanation
The potential difference across a silicon PN junction is 0.7 volt.
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About PN Junction
A PN junction forms when p type and n type semiconductor regions meet, creating a depletion layer and a potential barrier. The topic covers forward and reverse bias, diode current voltage characteristics, breakdown and rectification, while distinguishing an ordinary junction diode from a transistor formed from multiple junctions.
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