A potential barrier of 0.7 volt exists across P- N junction made from:
Correct answer: D. Silicon
- A. Gallium
- B. Indium
- C. Germinium
- D. Silicon
Explanation
A potential barrier of 0.7 volts across a P-N junction is typically associated with a junction made from silicon. This value depends on the type of semiconductor material, amount of doping, and temperature
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About PN Junction
A PN junction forms when p type and n type semiconductor regions meet, creating a depletion layer and a potential barrier. The topic covers forward and reverse bias, diode current voltage characteristics, breakdown and rectification, while distinguishing an ordinary junction diode from a transistor formed from multiple junctions.
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