Free Electronics MCQs with Answers

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A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.

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660 questions · page 6 of 33

  • A. 1
  • B. 2
  • C. 3
  • D. 4

Explanation: The gain of an ideal operational amplifier (op-amp) in an open-loop configuration is theoretically infinite.

Correct answer: 1
  • A. 1-10
  • B. 0.95-0.99
  • C. 20-100
  • D. 200-300

Explanation: Beta (β), also known as the current gain, is a dimensionless quantity that represents the ratio of the collector current (Ic) to the base…

Correct answer: 0.95-0.99
  • A. π
  • B. π/4
  • C. π/2
  • D. 0

Explanation: In a common base amplifier configuration, the input signal is applied between the base and the emitter, while the output signal is taken…

Correct answer: 0
  • A. Polarity
  • B. Intrinsic conduction
  • C. Electrostatic
  • D. Amplitude modulation

Explanation: Intrinsic conduction in semiconductors refers to the conduction of charges (electrons and holes) that are generated within the material…

Correct answer: Intrinsic conduction
  • A. Base only
  • B. Collector only
  • C. Both base and collector
  • D. None

Explanation: Correct. The emitter of a transistor has a higher concentration of impurity compared to both the base and the collectorIn summary, the…

Correct answer: None
  • A. Collisions of free electrons with one another
  • B. High drift speed of free electrons
  • C. Collision of free electrons with atoms or ions of conductor
  • D. High resistance value

Explanation: Correct. Heat is produced due to collisions of free electrons with atoms or ions in the conductorIn summary, the correct option is **c.

Correct answer: Collision of free electrons with atoms or ions of conductor
  • A. Electrons
  • B. Holes
  • C. Electrons and holes
  • D. No holes and electrons

Explanation: The depletion region is characterized by the absence of free charge carriers (both electrons and holes) due to the recombination of…

Correct answer: No holes and electrons
  • A. Amplification
  • B. Biasing
  • C. Modulation
  • D. Doping

Explanation: Biasing is the process of applying an external voltage or current to a semiconductor device (such as a diode or transistor) to control its…

Correct answer: Biasing
  • A. Forward voltage
  • B. Reverse current
  • C. Forward current
  • D. Type of semiconductors

Explanation: The color of light emitted by an LED depends on the semiconductor material used in its construction, which determines the energy bandgap.

Correct answer: Forward current
  • A. 1
  • B. 2
  • C. 3
  • D. 4

Explanation: A full-wave rectifier circuit requires at least four diodes to convert AC to DC.

Correct answer: 4
  • A. Nano ohms
  • B. Kilo ohms
  • C. Mega ohms
  • D. Milli ohms

Explanation: When a transistor is forward biased, the base-emitter junction acts like a forward-biased diode.

Correct answer: Nano ohms
  • A. As a Switch
  • B. As an Amplifier
  • C. As a Power Source
  • D. As an inverter

Explanation: Transistors are not power sources. They are semiconductor devices that amplify or switch electronic signals.

Correct answer: As a Power Source
  • A. Pentavalent
  • B. Trivalent
  • C. Both a and b
  • D. None of these

Explanation: When a trivalent impurity (like Boron, Aluminium, Gallium, Indium) is added to an intrinsic semiconductor (like Silicon or Germanium), it…

Correct answer: Trivalent
  • A. Conductors
  • B. Insulators
  • C. Semi-conductors
  • D. Superconductors

Explanation: Superconductors are materials that exhibit zero electrical resistance below a certain critical temperature.

Correct answer: Superconductors
  • A. A metal
  • B. A semiconductor
  • C. An insulator
  • D. None of these

Explanation: Metals have overlapping valence and conduction bands, enables free electron movement and conductivity at low temperatures.

Correct answer: A metal
  • A. The depletion region is reduced and barrier height is increased
  • B. The depletion region is widened and barrier height is reduced
  • C. Both the depletion region and barrier height are reduced
  • D. Both the depletion region and barrier height are increased

Explanation: Forward biasing reduces the depletion region and barrier height in a P-N junction, allowing easier current flow.

Correct answer: Both the depletion region and barrier height are reduced
  • A. 4.2 eV
  • B. 2.1 eV
  • C. 1.2 eV
  • D. 0.98 eV

Explanation: Photon energy E = hc/λ = 1240/589 ≈ 2.1 eV, which matches the band gap energy required to create a hole-electron pair.

Correct answer: 2.1 eV
  • A. 6
  • B. 5
  • C. 4
  • D. 3

Explanation: Trivalent impurities (e.g., boron) with valence 3 accept electrons, create holes, and form a P-type semiconductor.

Correct answer: 3
  • A. Np > Ne
  • B. Np = Ne
  • C. Np < Ne
  • D. Np > Ne or Np < Ne depending on the nature of impurity

Explanation: In P-type semiconductors, Np > Ne (more holes); in N-type, Np < Ne (more electrons), depending on the doping impurity.

Correct answer: Np > Ne or Np < Ne depending on the nature of impurity
  • A. A P-type semiconductor
  • B. An N-type semiconductor
  • C. A P-N junction
  • D. An intrinsic semiconductor

Explanation: A P-N junction allows current in forward bias and blocks it in reverse bias, matching the described behaviour.

Correct answer: A P-N junction