Free Electronics and Devices MCQs with Answers

758 Electronics and Devices MCQs from Electrical Engineering, each with the correct answer and a written explanation of why it is correct. Free and unlimited, with no account needed.

Last updated

758 questions · page 10 of 38

  • A. Biasing circuit
  • B. Bias battery
  • C. Diode
  • D. None of the above

Explanation: Transistor biasing is normally established using a biasing circuit containing suitable resistors and a supply arrangement.

Correct answer: Biasing circuit
  • A. Proper direct current
  • B. Proper alternating current
  • C. The base current small
  • D. Collector current small

Explanation: Biasing establishes the transistor’s required quiescent or zero-signal DC currents and voltages so the signal can be amplified without…

Correct answer: Proper direct current
  • A. Be zero
  • B. Be 0.01 V
  • C. Not fall below 0.7 V
  • D. Be between 0 V and 0.1 V

Explanation: A silicon base-emitter junction needs about 0.7 V forward bias to conduct properly in the active region.

Correct answer: Not fall below 0.7 V
  • A. 4
  • B. 1
  • C. 3
  • D. More than 10

Explanation: Small-signal amplifier stages commonly use a quiescent collector current of about 1 mA, providing suitable amplification while keeping…

Correct answer: 1
  • A. Operating point
  • B. Current gain
  • C. Voltage gain
  • D. None of the above

Explanation: The intersection of the DC load line and AC load line gives the quiescent operating point, also called the Q-point.

Correct answer: Operating point
  • A. Not fall below 1 V
  • B. Be zero
  • C. Be 0.2 V
  • D. None of the above

Explanation: Keeping VCE above approximately 1 V prevents the transistor from entering saturation during signal variations, allowing faithful…

Correct answer: Not fall below 1 V
  • A. Values of IC and VCE when signal is applied
  • B. The magnitude of signal
  • C. Zero signal values of IC and VCE
  • D. None of the above

Explanation: The operating point is defined by the quiescent, or zero-signal, values of collector current IC and collector-emitter voltage VCE.

Correct answer: Zero signal values of IC and VCE
  • A. a.c
  • B. d.c
  • C. both a.c. and d.c
  • D. none of the above

Explanation: Transistor biasing sets the DC voltages and currents that establish the operating point.

Correct answer: d.c
  • A. Proper forward bias
  • B. Proper reverse bias
  • C. Very small size
  • D. None of the above

Explanation: For a transistor to operate in the active region, its collector-base junction must be reverse biased.

Correct answer: Proper reverse bias
  • A. Decrease in the base current
  • B. Unfaithful amplification
  • C. Excessive collector bias
  • D. None of the above

Explanation: Without biasing, the transistor may remain in cutoff or enter saturation during part of the signal cycle, causing distortion.

Correct answer: Unfaithful amplification
  • A. A few free electrons
  • B. Many holes
  • C. Many free electrons
  • D. No holes or free electrons

Explanation: At absolute zero, thermal energy is insufficient to create electron-hole pairs in an ideal intrinsic semiconductor.

Correct answer: No holes or free electrons
  • A. O
  • B. kO
  • C. MO
  • D. None of the above

Explanation: A reverse-biased junction permits only a tiny leakage current, so its opposition to current is very high, typically of the order of…

Correct answer: MO
  • A. Very narrow depletion layer
  • B. Almost no current
  • C. Very low resistance
  • D. Large current flow

Explanation: Reverse bias widens the depletion region and strongly restricts majority-carrier flow, leaving only a very small leakage current.

Correct answer: Almost no current
  • A. 5 V
  • B. 3 V
  • C. Zero
  • D. 0.3 V

Explanation: The barrier voltage of a silicon junction is about 0.7 V, while germanium has the lower value of approximately 0.3 V.

Correct answer: 0.3 V
  • A. Diffusion
  • B. Pressure
  • C. Ionisation
  • D. None of the above

Explanation: Thermal agitation gives carriers random motion, and their net movement from a region of higher concentration to lower concentration is…

Correct answer: Diffusion
  • A. Repel each other
  • B. Attract each other
  • C. Have no effect on each other
  • D. None of the above

Explanation: An electron carries negative charge and a hole behaves as a positive charge, so their electrostatic force is attractive.

Correct answer: Attract each other
  • A. +ve terminal to p and -ve terminal to n
  • B. -ve terminal to p and +ve terminal to n
  • C. -ve terminal to p and -ve terminal to n
  • D. None of the above

Explanation: Forward bias connects the positive terminal to the p-side and the negative terminal to the n-side, reducing the depletion barrier.

Correct answer: +ve terminal to p and -ve terminal to n
  • A. Acceptor ions
  • B. Holes and electrons
  • C. Donor ions
  • D. None of the above

Explanation: Near the junction, electrons and holes recombine, leaving a depletion region almost free of mobile carriers.

Correct answer: Holes and electrons
  • A. Controlled switch
  • B. Bidirectional switch
  • C. Unidirectional switch
  • D. None of the above

Explanation: A pn junction conducts readily in forward bias but blocks current in reverse bias, so it behaves like a unidirectional switch.

Correct answer: Unidirectional switch
  • A. Equals the number of holes
  • B. Is greater than the number of holes
  • C. Is less than the number of holes
  • D. None of the above

Explanation: In an intrinsic semiconductor, electron-hole pairs are generated together, so every free electron is accompanied by a hole.

Correct answer: Equals the number of holes