All Free Electrical Engineering MCQs with Answers
Every Electrical Engineering question in the bank, across all chapters, each with the correct answer and a written explanation. Free and unlimited, with no account needed.
3,143 questions · page 109 of 158
- A. input voltage dependent linear transfer characteristic
- B. high voltage gain
- C. high input resistance
- D. high CMRR
Explanation: A differential amplifier rejects signals common to both inputs while amplifying their difference, giving it a high common-mode rejection…
Correct answer: high CMRR- A. Q -factor of the tuned o/p circuit
- B. Q -factor of the tuned i/p circuit
- C. Quiescent operating point
- D. Q-factor of the o/p and i/p circuits as well as quiescent operating point
Explanation: For the usual RF tuned amplifier, bandwidth is inversely proportional to the Q-factor of its tuned output circuit, approximately BW =…
Correct answer: Q -factor of the tuned o/p circuit- A. the edge of the depletion region on the p-side
- B. the edge of the depletion region on the n-side
- C. the p-n junction
- D. the center of the depletion region on the n-side
Explanation: Under reverse bias, the electric field rises from zero at the depletion-region edges to its maximum at the p-n junction, where the…
Correct answer: the p-n junction- A. affects the difference mode gain Ad
- B. affects the common mode gain Ac
- C. affects both Ad and Ac
- D. does not effect either Ad and Ac
Explanation: Changing the emitter or tail resistance mainly changes the common-mode gain because common-mode currents flow through this resistance.
Correct answer: affects the common mode gain Ac2165. Thermal runaway is not possible in FET because as the temperature of FET increases_________________?
- A. the mobility decreases
- B. the transconductance increases
- C. the drain current increases
- D. none of the above
Explanation: As FET temperature rises, carrier mobility decreases, reducing drain current for a given gate bias.
Correct answer: the mobility decreases- A. forward
- B. reverse
- C. both forward and reverse
- D. none of the above
Explanation: A zener diode is normally operated in reverse bias, where its controlled breakdown characteristic provides voltage regulation.
Correct answer: reverse- A. undefined
- B. sharp
- C. zero
- D. none of the above
Explanation: A zener diode is manufactured to enter breakdown at a specified, sharply defined voltage.
Correct answer: sharp- A. properly reverse bias the zener
- B. protect the zener
- C. properly forward bias the zener
- D. none of the above
Explanation: The series resistor limits the current through the zener when it operates in breakdown, preventing excessive dissipation and damage.
Correct answer: protect the zener- A. junction capacitance
- B. charge storage capacitance
- C. depletion capacitance
- D. channel length modulation
Explanation: Junction, depletion, and charge-storage capacitances are associated with p-n junction behavior.
Correct answer: channel length modulation- A. constant voltage
- B. constant current
- C. constant resistance
- D. none of the above
Explanation: In breakdown, a zener diode holds its voltage nearly constant over a range of current, so it is modeled approximately as a…
Correct answer: constant voltage- A. a non-linear
- B. a linear
- C. an amplifying
- D. none of the above
Explanation: A zener diode has a nonlinear voltage-current characteristic, especially around its breakdown region.
Correct answer: a non-linear- A. ICEO
- B. ICBO
- C. IC
- D. (1 - a ) IB
Explanation: Starting with I_C = βI_B + I_CEO and β = α/(1 − α), the relation becomes I_C = [α/(1 − α)]I_B + I_CEO.
Correct answer: ICEO2173. IC = ß IB +__________?
- A. ICBO
- B. IC
- C. ICEO
- D. aIE
Explanation: For a transistor in common-emitter form, collector current is I_C = βI_B + I_CEO, where I_CEO is the collector-emitter leakage current…
Correct answer: ICEO- A. common emitter
- B. common collector
- C. common base
- D. none of the above
Explanation: The common-base configuration has very high output resistance because its collector output characteristic is nearly flat.
Correct answer: common base- A. paper capacitor
- B. air capacitor
- C. mica capacitor
- D. electrolytic capacitor
Explanation: Paper capacitors are commonly used as high-voltage filter capacitors because they withstand high working voltages and provide suitable…
Correct answer: paper capacitor2176. IC = aIE +____________?
- A. IB
- B. ICEO
- C. ICBO
- D. ßIB
Explanation: The common-base transistor relation is I_C = αI_E + I_CBO, where I_CBO is the collector-to-base leakage current with the emitter open.
Correct answer: ICBO- A. the diode conducts poorly
- B. the diode is destroyed
- C. the diode behaves like a zener diode
- D. none of the above
Explanation: Exceeding a diode's peak inverse voltage causes reverse-breakdown current, which can overheat and permanently damage the junction.
Correct answer: the diode is destroyed- A. acceptor ions
- B. donor ions
- C. free electrons
- D. holes
Explanation: A PNP transistor has holes as its majority charge carriers, supplied mainly by the p-type emitter.
Correct answer: holes- A. heavily
- B. moderately
- C. lightly
- D. none of the above
Explanation: The collector is moderately doped so it can withstand a relatively high reverse-bias voltage while still collecting carriers efficiently.
Correct answer: moderately- A. paper capacitor
- B. mica capacitor
- C. electrolytic capacitor
- D. air capacitor
Explanation: A 10 V power supply commonly uses an electrolytic capacitor because it provides large capacitance for smoothing rectified voltage and is…
Correct answer: electrolytic capacitor