Which one is most suitable power device for high frequency (>100 KHz) switching application?
Correct answer: B. Power MOSFET
- A. BJT
- B. Power MOSFET
- C. Schottky diode
- D. Microwave transistor
Explanation
Power MOSFETs are majority-carrier devices, so they switch much faster than BJTs and are well suited to switching frequencies above 100 kHz. A Schottky diode is not itself a controllable switching device.
Last updated
Practise Power Electronics
253 free Power Electronics MCQs from Electrical Engineering, each with the correct answer and an explanation. Unlimited attempts, no account needed.
Exams that ask Electrical Engineering questions like this
Electrical Engineering is on 2 papers prepared for on TestUstad, and all of them draw the same bank, so this question is worth knowing for every one of them.
Related questions
60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is______________________?
A capacitive load in voltage source inverters generates ________________?
A carrier based PWM technique in CSI is composed of____________?
A combination of synchronized leading edge and trailing edge modulation has also been used to control a____________?
A commutating rectifier consists of commutator driven by___________?