A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
Correct answer: A. IGBT
- A. IGBT
- B. FCT
- C. MCT
- D. GTO
Explanation
An IGBT uses a MOSFET-like insulated gate for easy voltage control and a BJT-like conduction path for high current capability. This combination gives lower conduction loss than a MOSFET at higher voltages.
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