A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
Correct answer: A. IGBT
- A. IGBT
- B. FCT
- C. MCT
- D. GTO
Explanation
An IGBT uses a MOSFET-like insulated gate for easy voltage control and a BJT-like conduction path for high current capability. This combination gives lower conduction loss than a MOSFET at higher voltages.
Report an error
The more specific you are, the faster it gets fixed. A source beats an opinion.
Prefer email? [email protected]
Practise Power Electronics
253 free Power Electronics MCQs from Electrical Engineering, each with the correct answer and an explanation. Unlimited attempts, no account needed.
Discussion
Stuck on an option, or know a faster way to get there? Ask or explain it here.
No comments yet. Be the first to explain this one.
Exams that ask Electrical Engineering questions like this
Electrical Engineering is on 2 papers prepared for on TestUstad, and all of them draw the same bank, so this question is worth knowing for every one of them.
More Power Electronics questions
Rise time is defined by the interval when____________?
A power MOSFET has three terminals called___________?
The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
Which one is most suitable power device for high frequency (>100 KHz) switching application?
Snubber circuit is used with SCR_________________?
What happen due to high di / dt____________?