When the P-type of the PN-junction is connected with the negative terminal and the N-type with the positive terminal of the battery, the width of the depletion region:
Correct answer: B. Increases
- A. Decreases
- B. Increases
- C. Diode is forward biased, the width of the depletion region increases
- D. None of these
Explanation
When the P-type is connected to the negative and the N-type is connected to the positive, the diode is reverse-biased, and the width of the depletion region increases.
Report an error
The more specific you are, the faster it gets fixed. A source beats an opinion.
Prefer email? [email protected]
About Electronics
A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.
Practise Electronics
660 free Electronics MCQs from Physics, each with the correct answer and an explanation. Unlimited attempts, no account needed.
Discussion
Stuck on an option, or know a faster way to get there? Ask or explain it here.
No comments yet. Be the first to explain this one.
Exams that ask Physics questions like this
Physics is on 16 papers prepared for on TestUstad, and all of them draw the same bank, so this question is worth knowing for every one of them.
More Electronics questions
The potential difference across the silicon PN-junction is:
The depletion region in PN-Junction carries:
When p-type and N-type semiconductor are combined then we have a:
In forward biasing, the knee voltage for Germanium PN-Junction is:
In an N-type silicon, which of the following statement is true:
The reverse saturation current in a PN Junction diode is only due to: