When P-N junction diode is forward biased then:
Correct answer: C. Both the depletion region and barrier height are reduced
- A. The depletion region is reduced and barrier height is increased
- B. The depletion region is widened and barrier height is reduced
- C. Both the depletion region and barrier height are reduced
- D. Both the depletion region and barrier height are increased
Explanation
When a P-N junction diode is forward-biased, the external voltage reduces the potential barrier, allowing charge carriers to move across the junction. This results in the reduction of the depletion region and the barrier height, facilitating the flow of current. Option C correctly describes these effects. The other options are incorrect because they either incorrectly describe widening/increasing the depletion region or barrier height, which does not occur under forward biasing.
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A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.
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