In the case of germanium, the value of potential barrier develops across the depletion region is
Correct answer: B. 0.3V
- A. 0v
- B. 0.3V
- C. 0.7V
- D. 0.9V
Explanation
0.3 V for Germanium and 0.7 V for silicon.
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A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.
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