In the forward biasing, the resistance offered by a p-n junction diode
Correct answer: A. is low
- A. is low
- B. is zero
- C. is high
- D. varies
Explanation
In forward biasing, a p-n junction diode experiences a reduction in resistance due to the application of an external voltage that allows current to flow easily through it. This is because the external voltage decreases the width of the depletion region, enabling charge carriers to move more freely across the junction. Option A is correct as it accurately states that the resistance is low in this state. Option B is incorrect because resistance does not drop to zero; there is always some resistance present. Option C is incorrect as it contradicts the principle of forward biasing, where the resistance is indeed low, not high. Option D is misleading because, while resistance can vary in different situations, in the context of forward biasing, it remains consistently low, not fluctuating.
Last updated
About PN Junction
A PN junction forms when p type and n type semiconductor regions meet, creating a depletion layer and a potential barrier. The topic covers forward and reverse bias, diode current voltage characteristics, breakdown and rectification, while distinguishing an ordinary junction diode from a transistor formed from multiple junctions.
Practise Electronics
660 free Electronics MCQs from Physics, each with the correct answer and an explanation. Unlimited attempts, no account needed.
Exams that ask Physics questions like this
Physics is on 13 papers prepared for on TestUstad, and all of them draw the same bank, so this question is worth knowing for every one of them.
Related questions
a certain transistor has collector current of 10 mA and a base current 40 uA. what is the current gain of the transistor
A light emitting diode (LED) emits light only when it isI. unbiasedII. reverse biasedIII. forward biased
A light emitting diode produces light when
A logic gate has four inputs. Its possible input combinations will be:
A n-type semiconductor is formed in an extrinsic semiconductor when