The potential difference applied across a diode to reduce depletion layer is:
Correct answer: B. Forward biasing
- A. Reverse biasing
- B. Forward biasing
- C. Biasing voltage
- D. Junction potential
- E. Potential barrier
Explanation
The potential difference applied across a diode to reduce the depletion layer is: Forward biasing. When a diode is forward biased, the positive terminal of the voltage source is connected to the P-type material of the diode, and the negative terminal is connected to the N-type material. This configuration decreases the potential barrier between the P-type and N-type regions of the diode, reducing the width of the depletion layer. So option B is correct.
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About Electronics
A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.
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