The external pot once applied to p-n junction for forward biasing supplied energy to:
Correct answer: C. Both free electrons and holes
- A. Free electrons in n region
- B. Holes in p-region
- C. Both free electrons and holes
- D. None of these
Explanation
When a p-n junction diode is forward biased, i.e. forward biasing voltage V is applied to the diode, this potential difference reduces the barrier potential Vo. The effective barrier potential reduces to (Vo−V)and thickness of the depletion layer also decreases. The holes (majority carriers) in p-region and electrons (majority carriers) in n-junction acquire sufficient energy to cross over the potential barrier across the junction.
Last updated
About Electronics
A p-n junction forms when p-type and n-type semiconductor regions meet, creating a depletion layer, barrier potential and rectifying action. The work covers forward and reverse bias, junction current, diode characteristics, and how a diode converts alternating current into pulsating direct current through half-wave and full-wave rectification.
Practise Electronics
660 free Electronics MCQs from Physics, each with the correct answer and an explanation. Unlimited attempts, no account needed.
Exams that ask Physics questions like this
Physics is on 13 papers prepared for on TestUstad, and all of them draw the same bank, so this question is worth knowing for every one of them.
Related questions
(7) In n-p-n transistor, p works as: (Tag: Electronics sub-tag: Transistors )
A capacitor and an inductor are connected to the A.C. supply. If we double the frequency of the A.C. supply then the effect on the reactance of capacitor XC and reactance of inductor XL will be:
A capacitor is to be used to provide smoothing for a half wave rectifier. In which of the following diagrams is capacitor correctly connected?
A changing electric flux develops in the region:
A circuit that adds positive or negative voltage to an input sine wave is called _.